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power management & multimarket data sheet revision 1.4, 2014-10-23 final esd110-b1 series bi-directional, 18.5 v (ac), 0.3 pf, 0201, 0402, ro hs and halogen free compliant ESD110-B1-02ELs ESD110-B1-02EL protection device tvs (transient voltage suppressor)
edition 2014-10-23 published by infineon technologies ag 81726 munich, germany ? 2014 infineon technologies ag all rights reserved. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ) warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. infineon technologies components may be used in life-suppo rt devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or sys tem. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if t hey fail, it is reasonable to assume that the health of the user or other persons may be endangered.
esd110-b1 series product overview final data sheet 3 revision 1.4, 2014-10-23 1 product overview 1.1 features ? esd / transient protection according to: ? iec61000-4-2 (esd): 15 kv (air), 12 kv (contact) ? iec61000-4-5 (surge): 2 a ( t p = 8 / 20 s) ? bi-directional, work ing voltage up to v rwm = 18.5 v (ac) ? ultra-low capacitance: c l = 0.3 pf (typical) ? low clamping voltage: v cl = 28 v (typical) at i tlp = 16 a ? very low reverse current: i r < 1 na (typical) ? pb-free (rohs compliant) and halogen free package 1.2 application examples ? esd protection of rf signal lines in near field communication (nfc) applications 1.3 product description figure 1-1 pin configuration and schematic diagram table 1-1 part information type package configuration marking code ESD110-B1-02ELs tsslp-2-4 1 line, bi-directional x ESD110-B1-02EL tslp-2-20 1 line, bi-directional xx pinconf_and_schematicdiag.vsd pin 1 pin 2 pin 1 pin 2 pin 1 marking (lasered)
esd110-b1 series maximum ratings final data sheet 4 revision 1.4, 2014-10-23 2 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 3 electrical characteristics at t a = 25 c, unless otherwise specified figure 3-1 definitions of electrical characteristics table 2-1 maximum ratings at t a = 25 c, unless otherwise specified 1) 1) device is electrically symmetrical parameter symbol values unit esd air discharge 2) esd contact discharge 2) 2) v esd according to iec61000-4-2 v esd 15 12 kv peak pulse power 3) p pk 58 w peak pulse current 3) 3) non-repetitive current pulse 8/20s exponent ial decay waveform according to iec61000-4-5 i pp 2 a operating temperature t op -40 to 125 c storage temperature t stg -55 to 150 c

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esd110-b1 series electrical characteristics at t a = 25 c, unless otherwise specified final data sheet 5 revision 1.4, 2014-10-23 table 3-1 dc characteristics at t a = 25 c, unless otherwise specified 1) 1) device is electrically symmetrical parameter symbol values unit note / test condition min. typ. max. reverse working voltage v rwm -18.5 ? 18.5 v for ac voltages (nfc) -15 ? 15 for dc voltages trigger voltage v t1 20??v holding voltage v h 20 21 26 v t a = 25 c, i t = 0.5 ma ?19? t a = 125 c, i t = 0.5 ma reverse leakage current i r ?<130nat a = 25 c, v r = 18.5 v ?10? t a = 125 c, v r = 18.5 v table 3-2 ac characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit note / test condition min. typ. max. line capacitance c l 0.15 0.3 0.5 pf v r = 0 v, f = 1 mhz 0.15 0.3 0.5 v r = 0 v, f = 1 ghz serie inductance l s ? 0.2 ? nh ESD110-B1-02ELs ? 0.4 ? ESD110-B1-02EL table 3-3 esd and surge characteristics at t a = 25 c, unless otherwise specified 1) 1) device is electrically symmetrical parameter symbol values unit note / test condition min. typ. max. clamping voltage 2) 2) please refer to application note an210 [1] . tlp parameter: z 0 = 50 , t p = 100ns, t r = 300ps v cl ? 3035v i tlp = 16 a, t p = 100 ns ?3944 i tlp = 30 a, t p = 100 ns clamping voltage 3) 3) non-repetitive current pulse 8/20s exponent ial decay waveform according to iec61000-4-5 v cl ?1924 i pp = 1 a, t p = 8/20 s ?2429 i pp = 2 a, t p = 8/20 s dynamic resistance 2) r dyn ?0.6? t p = 100 ns
esd110-b1 series typical characteristics diagrams final data sheet 6 revision 1.4, 2014-10-23 4 typical characteristics diagrams typical characteristics diagrams at t a =25c, unless otherwise specified figure 4-1 reverse leakage current: i r = f ( v r ) figure 4-2 line capacitance: c l = f ( v r ) 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 0 5 10 15 20 i r [a] v r [v] 0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 12 14 16 18 20 c l [pf] v r [v] 1 mhz 1 ghz
esd110-b1 series typical characteristics diagrams final data sheet 7 revision 1.4, 2014-10-23 figure 4-3 clamping voltage (esd): v cl = f ( t ), 8 kv positiv pulse from pin 1 to pin 2 figure 4-4 clamping voltage (esd): v cl = f ( t ), 8 kv negativ pulse from pin 1 to pin 2 -20 0 20 40 60 80 100 120 140 160 -50 0 50 100 150 200 250 300 350 400 450 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = 142 v v cl-30ns-peak = 26 v -160 -140 -120 -100 -80 -60 -40 -20 0 20 -50 0 50 100 150 200 250 300 350 400 450 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = -144 v v cl-30ns-peak = -25 v
esd110-b1 series typical characteristics diagrams final data sheet 8 revision 1.4, 2014-10-23 figure 4-5 clamping voltage (esd): v cl = f ( t ), 15 kv positiv pulse from pin 1 to pin 2 figure 4-6 clamping voltage (esd): v cl = f ( t ), 15 kv negativ pulse from pin 1 to pin 2 -25 0 25 50 75 100 125 150 175 200 -50 0 50 100 150 200 250 300 350 400 450 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = 187 v v cl-30ns-peak = 33 v -200 -175 -150 -125 -100 -75 -50 -25 0 25 -50 0 50 100 150 200 250 300 350 400 450 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = -181 v v cl-30ns-peak = -31 v
esd110-b1 series typical characteristics diagrams final data sheet 9 revision 1.4, 2014-10-23 figure 4-7 clamping voltage (tlp): i tlp = f ( v tlp ) [1] , pin 1 to pin 2 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 -15 -12.5 -10 -7.5 -5 -2.5 0 2.5 5 7.5 10 12.5 15 i tlp [a] equivalent v iec [kv] v tlp [v] esd110-b1 series r dyn r dyn = 0.6 r dyn = 0.6
esd110-b1 series typical characteristics diagrams final data sheet 10 revision 1.4, 2014-10-23 figure 4-8 clamping voltage(surge): i pp = f ( v cl ) -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 i pp [a] v cl [v]
esd110-b1 series typical characteristics diagrams final data sheet 11 revision 1.4, 2014-10-23 figure 4-9 insertion loss vs. frequency in a 50 ? system -16 -14 -12 -10 -8 -6 -4 -2 0 10 100 1000 10000 insertion loss [db] f [mhz] ESD110-B1-02EL ESD110-B1-02ELs
esd110-b1 series application information final data sheet 12 revision 1.4, 2014-10-23 5 application information figure 5-1 bi-directional esd / tran sient protection for nfc frontend [3] esd18v_application example .vsd lo o p a n te nna ~1h gnd loop + loop- mobile phone differential antenna loop gnd mobile phone single ended antenna tx- rx - tx+ gnd nfc mo dule tx/rx section caps should be high voltage type to be save regards the residual esd peak rf=13.56mhz signal vs . gnd<+-18vp +vsignal vs . -vsignal <36v!!! e mi lp f ilt e r antenna m atching interconnection top/bottom shell ?external pads? main pcb / top shell bottom shell caps should be high voltage type to be save regards the residual esd peak rf=13.56mhz signal vs . gnd<+-18vp interconnection top /bottom shell ?external pads? tx- rx - tx+ gnd nfc modul e tx/ rx sectio n e mi lp f ilt e r antenna m atching main pcb / top shell bottom shell
esd110-b1 series package information final data sheet 13 revision 1.4, 2014-10-23 6 package information 6.1 tsslp-2-4 figure 6-1 tsslp-2-4: package outline figure 6-2 tsslp-2-4: footprint figure 6-3 tsslp-2-4: packing figure 6-4 tsslp-2-4: marking (example) table 1-1 ?part information? on page 3 tsslp-2-3, -4-po v01 0.05 0.32 1 2 0.035 0.2 1) 0.62 0.05 +0.01 0.31 -0.02 1) dimension applies to plated terminals pin 1 marking 1) 0.035 0.26 0.05 max. bottom view top view 0.355 0.27 0.19 0.19 0.19 copper solder mask stencil apertures 0.57 0.24 0.62 0.32 0.24 0.14 tsslp-2-3, -4-fp v02 ex 4 ey 0.35 pin 1 marking 8 tsslp-2-3, -4-tp v03 deliveries can be both tape types (no selection possible). specification allows identical processing (pick & place) by users. ex ey punched tape tape type embossed tape 0.43 0.73 0.37 0.67 tsslp- 2 - 3 , -4 -mk v 01 pin 1 marking 1 type code
esd110-b1 series package information final data sheet 14 revision 1.4, 2014-10-23 6.2 tslp-2-20 figure 6-5 tslp-2-20: package overview figure 6-6 tslp-2-20: footprint figure 6-7 tslp-2-20: packing figure 6-8 tslp-2-20: marking example table 1-1 ?part information? on page 3 tslp-2-19, -20-po v01 0.05 0.6 1 2 0.05 0.65 0.035 0.25 1) 1 0.05 0.05 max. +0.01 0.31 -0.02 1) dimension applies to plated terminals pin 1 marking 1) 0.035 0.5 bottom view top view tslp-2-19, -20-fp v01 0.45 0.28 0.28 0.38 0.93 copper solder mask stencil aperture s 0.35 1 0.6 0.35 0.3 0.76 4 1.16 0.4 pin 1 marking 8 tslp-2-19, -20-tp v02 type code pin 1 marking tslp-2-19, -20-mk v01 12
esd110-b1 series references final data sheet 15 revision 1.4, 2014-10-23 references [1] infineon ag - application note an210: effective esd protection design at system level using vf-tlp characterization methodology [2] infineon ag - recommendations for pcb a ssembly of infineon tslp and tsslp packages [3] infineon ag - application note an244: tailored esd protection for the nfc frontend
esd110-b1 series final data sheet 16 revision 1.4, 2014-10-23 trademarks of infineon technologies ag aurix?, bluemoon?, comneon? , c166?, crossave?, canpak?, ci pos?, coolmos?, coolset?, corecontrol?, dave?, easypim?, econobridg e?, econodual?, eco nopack?, econopim?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, isoface? , i2rf?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, profet?, pro-sil?, primarion?, primepack? , rasic?, reversave?, satric?, sieget?, sindrion ?, smarti?, smartlewis?, tempfet?, thin q!?, tricore?, trenchstop?, x-gold?, xmm?, x-pmu?, xposys?. other trademarks advance design system? (ads) of agilent tech nologies, amba?, arm?, multi-ice?, primecell?, realview?, thumb? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus? , firstgps? of trimble navigation ltd. emv? of emvco, llc (visa holdings inc.). epco s? of epcos ag. flexgo? of microsoft corporation. flexray? is licensed by flexra y consortium. hyperterminal? of hilgraeve incorpor ated. iec? of commission electrotechnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization . matlab? of mathworks, inc. maxim? of maxim integrated products, inc. mi crotec?, nucleus? of mentor graphi cs corporation. mifare? of nxp. mipi? of mipi alliance, inc. mips? of mips technologies, in c., usa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius sattelite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-06-09 revision history: rev. 1.3, 2014-04-08 page or item subjects (major changes since previous revision) revision 1.4, 2014-10-23 4 table 2-1) updated
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